- All sections
- C - Chemistry; metallurgy
- C30B - Single-crystal growth; unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; refining by zone-melting of material; production of a homogeneous polycrystalline material with defined structure; single crystals or homogeneous polycrystalline material with defined structure; after-treatment of single crystals or a homogeneous polycrystalline material with defined structure; apparatus therefor
- C30B 28/10 - Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
Patent holdings for IPC class C30B 28/10
Total number of patents in this class: 55
10-year publication summary
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1
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1
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0
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1
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0
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1
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2
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2
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1
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1
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| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Sumco Corporation | 1116 |
9 |
| The 13th Research Institute of China Electronics Technology Group Corporation | 118 |
3 |
| RGS Development B.V. | 9 |
3 |
| Siltron Inc. | 45 |
3 |
| Corning Incorporated | 9932 |
2 |
| NGK Insulators, Ltd. | 4589 |
2 |
| Toyoda Gosei Co., Ltd. | 1746 |
2 |
| Shanghai Institute of Ceramics, Chinese Academy of Sciences | 153 |
2 |
| Shin-Etsu Handotai Co., Ltd. | 1277 |
2 |
| Sumco TECHXIV Corporation | 109 |
2 |
| Varian Semiconductor Equipment Associates, Inc. | 1282 |
1 |
| The United States of America as represented by the Secretary of the Army | 1195 |
1 |
| 1366 Technologies, Inc. | 17 |
1 |
| Freiberger Compound Materials GmbH | 61 |
1 |
| Globalwafers Japan Co., Ltd. | 62 |
1 |
| Inductotherm Corp. | 152 |
1 |
| Korea Institute of Energy Research | 803 |
1 |
| Osaka University | 3143 |
1 |
| REC Silicon Inc | 77 |
1 |
| Siltronic AG | 395 |
1 |
| Other owners | 15 |